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Femtosecond laser writing of integrated photonic circuits in diamond

MetadataDetails
Publication Date2021-01-01
JournalEPJ Web of Conferences
AuthorsGiulio Coccia, Argyro N. Giakoumaki, Vibhav Bharadwaj, Ottavia Jedrkiewicz, Roberta Ramponi
InstitutionsPolitecnico di Milano, Istituto di Fotonica e Nanotecnologie
AnalysisFull AI Review Included

This research details the fabrication and integration of integrated photonic circuits and Nitrogen Vacancy (NV-) color centers within the bulk of synthetic diamond using femtosecond laser writing (FLW).

  • Core Value Proposition: FLW enables the systematic, non-invasive, and 3D fabrication of optical waveguides (WGs) and quantum emitters (NV- centers) in diamond, creating a robust platform for room-temperature quantum sensing.
  • Fabrication Method: Type II WGs and high-density NV- ensembles are created using a 515 nm, 300 fs Yb laser, followed by a 1000 °C annealing step to mobilize vacancies and form the color centers.
  • Integration Achievement: NV- ensembles were successfully integrated between the laser-written WG tracks with a spatial accuracy of approximately 500 nm.
  • Density Achieved: The process yielded high NV- densities, reaching up to 1.4 x 1015 cm-3 (8 ppb) in the ‘static exposure’ regions.
  • Sensing Performance (Estimated): The proof-of-concept device demonstrates competitive estimated sensitivities: 1.5 nT Hz-1/2 for magnetic fields and 2.4 V cm-1 Hz-1/2 for electric fields.
  • Future Optimization: Future work includes integrating Bragg reflectors to increase the effective light-NV- interaction length and exploiting strain-induced electric bias fields to enhance sensitivity to weak external fields.
ParameterValueUnitContext
Laser TypeYb FemtosecondN/AFabrication source
Pulse Duration300fsLaser writing parameters
Repetition Rate500kHzLaser writing parameters
Central Wavelength515nmLaser writing parameters
Pulse Energy100nJUsed for writing WGs and static exposures
Post-Fabrication Annealing1000°CRequired for vacancy migration and NV- formation
Waveguide TypeType IIN/AGuiding achieved between two written tracks
Waveguide Sidewall Separation13”m’Empty’ waveguide design
Waveguide Mode Field Diameter10”mEstimated at 532 nm
NV- Density (Static Exposure)1.4 x 1015cm-3Highest density achieved (8 ppb)
Estimated Magnetic Sensitivity (ηm)1.5nT Hz-1/2Proof-of-concept device estimate
Estimated Electric Sensitivity (ηe)2.4V cm-1 Hz-1/2Proof-of-concept device estimate
NV- Spin Transition Shift (Magnetic)28GHz T-1Fundamental NV- property (km)
NV- Spin Transition Shift (Electric)17Hz cm V-1Fundamental NV- property (ke)
Spatial Accuracy (NV placement)~500nmAccuracy of NV creation relative to WG tracks

The integration of photonic circuits and NV- centers relies on a multi-step femtosecond laser writing and thermal processing recipe:

  1. Material Selection: High-Pressure/High-Temperature (HPHT) synthetic diamond is used as the substrate, providing the necessary nitrogen impurities for NV- formation.
  2. Femtosecond Laser Writing (FLW): A focused Yb femtosecond laser (300 fs, 515 nm, 100 nJ) is used to induce localized structural changes in the bulk diamond, creating vacancies (lattice disorder).
  3. Waveguide (WG) Fabrication: Type II WGs are formed by writing two parallel tracks (13 ”m separation). The lattice disorder in the tracks decreases the refractive index, confining light in the unmodified region between them.
  4. NV- Ensemble Creation: High-density NV- ensembles are created by applying single ‘static exposures’ (100 nJ pulses) between the WG tracks, generating a high concentration of vacancies in the desired sensing volume.
  5. Thermal Annealing: The diamond sample undergoes a post-fabrication high-temperature annealing treatment (1000 °C). This step is critical as it mobilizes the laser-created vacancies, allowing them to migrate and combine with existing nitrogen impurities to form the stable NV- color centers.
  6. Optical Readout and Characterization: Photoluminescence (PL) spectroscopy is used to confirm the presence of NV- centers (Zero Phonon Line at 637 nm). Power-dependent PL saturation measurements are used to quantify the resulting NV- ensemble density.
  7. Sensing Device Operation: Excitation and detection are performed by coupling a green laser into the written WG, allowing the light to interact with the integrated NV- ensemble for Optically Detected Magnetic Resonance (ODMR) measurements.

The integration of robust quantum emitters and photonic circuits in diamond enables next-generation technologies across several high-value sectors:

  • Quantum Sensing and Metrology:
    • High-Resolution Magnetometry: Used for detecting extremely weak magnetic fields in medical diagnostics (e.g., non-invasive brain imaging), materials science, and geological surveys.
    • Electric Field Sensing: Detection of weak electric fields for characterizing microelectronic devices, particularly in harsh environments, or for biological measurements.
    • Room-Temperature Operation: NV- centers allow quantum sensing without the need for cryogenic cooling, simplifying device deployment.
  • Quantum Information Processing:
    • Integrated Quantum Circuits: Diamond serves as a stable host for quantum memory and logic gates, paving the way for scalable quantum computers and repeaters.
    • Quantum Communication: Fabrication of 3D photonic structures (like integrated Bragg reflectors) to enhance light-matter interaction for efficient quantum state transfer.
  • Harsh Environment Photonics:
    • High-Power Optics: Utilizing diamond’s superior thermal and mechanical properties for integrated optical components (WGs) that must withstand extreme temperatures or chemical exposure.
  • Fundamental Physics Research:
    • Strain Engineering: Exploiting the strain created by the WG writing process to introduce a constant electric bias field, which can decouple the NV- centers from stray magnetic noise, improving measurement fidelity.
View Original Abstract

Integrated photonic circuits pave the way for next generation technologies for quantum information and sensing applications. Femtosecond laser writing has emerged as a valuable technique for fabricating such devices when combined with diamond’s properties and its nitrogen vacancy color center. Such color centers are fundamental for sensing applications, being possible to excite them and read them out optically through the fabrication of optical waveguides in the bulk of diamond. We show how to integrate these building blocks in diamond, to develop proof-of-concept devices with unprecedented electric and magnetic field sensitivities.