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6CCVD Research

n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2021-01-11
JournalApplied Physics Letters
AuthorsDong‐Pyo Han, Ryoto Fujiki, Ryo Takahashi, Yusuke Ueshima, Shintaro Ueda
InstitutionsNagoya University, Meijo University
Citations16

Abstract

Section titled “Abstract”

In this study, we attempt to identify the presence of surface defects (SDs) at an n-type GaN surface after high-temperature growth and gain insight into their intrinsic features. To this end, first, we carefully investigate n-type GaN samples with different surface etching depths. Low-temperature photoluminescence (PL) spectra reveal that SDs are most likely nitrogen vacancies (VN) and/or VN-related point defects intensively distributed within ∟100 nm from the n-type GaN surface after a high-temperature growth. We investigate the effect of SDs on the internal quantum efficiency (IQE) of green light-emitting diodes (LEDs) by preparing GaInN-based green LEDs employing a surface-etched n-type GaN, which exhibits a prominent enhancement of the PL efficiency with an increase in the etching depth. This effect is attributable to the reduced non-radiative recombination centers in multiple-quantum-well active regions because the SDs near the n-type GaN surface are removed by etching. We discuss strategies of in situ engineering on SDs to further improve the IQE in GaInN-based green LEDs on the basis of the results presented in this study.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
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  10. 2019 - Modified Shockley equation for GaInN-based light-emitting diodes: Origin of the power-efficiency degradation under high current injection [Crossref]

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