Fabrication of n‐Type Doped V‐Shaped Structures on (100) Diamond
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2021-02-17 |
| Journal | physica status solidi (a) |
| Authors | Christoph Schreyvogel, Solange Temgoua, Christian Giese, V. Cimalla, Julien Barjon |
| Institutions | Fraunhofer Institute for Applied Solid State Physics, Groupe d’Étude de la Matière Condensée |
| Citations | 12 |
Abstract
Section titled “Abstract”Herein, a technological process for the fabrication of n‐type doped V‐shaped structures on (100) single‐crystalline diamond substrates, designed to overcome the limitations of n‐type doping on (100) surfaces, is presented. This doping enhancement process can be applied to realize electronic power devices such as a junction barrier Schottky diode or junction field effect transistors with low on‐resistance. Herein, a catalytic etching process is performed by using square‐shaped nickel masks on the diamond surface and annealing in a hydrogen atmosphere, resulting in the formation of inverted pyramidal structures with flat {111} sidewalls. The resulting V‐shaped structures are subsequently overgrown with phosphorus‐doped diamond to achieve n‐type doped facets with higher doping concentrations. Cathodoluminescence studies reveal the predominant incorporation of phosphorus donors on the {111} sidewalls of V‐shaped structures.