Recent Progress and Issues of Diamond Metal-oxide-semiconductor (MOS) Interface for High-Frequency and Power Device Application
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-02-09 |
| Journal | Vacuum and Surface Science |
| Authors | Tsubasa Matsumoto, Xufang Zhang, Norio Tokuda |
| Institutions | Kanazawa University |
| Citations | 2 |
Abstract
Section titled āAbstractāDiamond has various useful material properties such as a wide bandgap, high carrier mobility, high breakdown field, and high thermal conductivity. Therefore, diamond is expected as high-frequency, low-loss and high-power device materials. Our fabricated diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) showed normally off properties, which is important for power devices. However, the MOSFETs suffer from low field-effect mobility, which is mainly attributed to existence of high interface state density near the valence band edge on diamond. In this report, we introduce the lateral growth technique and the OH termination technique. We also discuss electrical properties of diamond MOSFETs and MOS capacitors.