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Magnetic domains and domain wall pinning in atomically thin CrBr3 revealed by nanoscale imaging

MetadataDetails
Publication Date2021-03-31
JournalNature Communications
AuthorsQi‐chao Sun, Tiancheng Song, Eric Anderson, Andreas Brunner, Johannes Förster
InstitutionsMax Planck Institute for Solid State Research, Max Planck Institute for Intelligent Systems
Citations107
AnalysisFull AI Review Included

The research details the successful application of cryogenic scanning Nitrogen-Vacancy (NV) center magnetometry to quantitatively analyze magnetic domains and coercivity mechanisms in atomically thin Chromium Bromide (CrBr3).

  • Quantitative Nanoscale Probing: The study provides the first real-space imaging of magnetic domains and their evolution in atomically thin CrBr3, overcoming limitations of conventional micro-scale techniques.
  • High Sensitivity and Resolution: The setup utilizes a pulsed Optically Detected Magnetic Resonance (ODMR) scheme, achieving a high magnetic field sensitivity of ~0.3 ”THz-1 and a spatial resolution of ~80 nm.
  • Thermal Management: The pulsed measurement significantly reduces microwave heating, limiting the sample temperature increase to only a few hundred milli-Kelvin (mK) above the 4.2 K base temperature.
  • Magnetization Quantification: The saturation magnetization (Msat) of a CrBr3 bilayer was quantitatively determined to be approximately 26 Bohr magnetons per square nanometer (”B/nm2).
  • Coercivity Mechanism Identified: Domain wall pinning at specific defect sites is unambiguously proven to be the dominant coercivity mechanism governing magnetic reversal in the CrBr3 bilayer.
  • Defect Mapping: The high spatial resolution allows for the precise location of defects that pin domain walls and nucleate reverse domains, crucial for understanding material imperfections.
ParameterValueUnitContext
Base Measurement Temperature< 5KLiquid helium cryostat operation.
CrBr3 Sample Thickness~2nmBilayer sample, confirmed by AFM step height.
NV Center Sensitivity~0.3”THz-1Optimal magnetic field sensitivity achieved via pulsed ODMR.
Spatial Resolution~80nmLimited by the distance (h) between the NV center and the sample.
Saturation Magnetization (Bilayer)~26”B/nm2Experimentally determined Msat for CrBr3.
Theoretical Msat (Bilayer)~32”B/nm2Based on 3 ”B saturation moment per Cr3+ ion.
NV Axis Angle~54.7°Angle relative to the vertical direction (out-of-plane).
External Field for Saturation (Bsat)11mTField used to fully polarize the sample.
Microwave Heating EffectFew hundredmKTemperature increase observed during pulsed ODMR.
Microwave Pulse (pi-pulse) Duration~80nsUsed for spin manipulation.
Laser Pulse Duration600nsUsed for optical initialization/readout.
Sample EncapsulationhBNN/AUsed on both sides of CrBr3 for protection.
  1. Cryogenic Scanning NV Magnetometry Setup:

    • A single NV center implanted in a diamond pillar probe is attached to an Atomic Force Microscope (AFM) tuning fork, operating in frequency modulation mode (oscillation amplitude ~1.5 nm).
    • The microscope head is suspended in an insertion tube filled with helium buffer gas, dipped into a liquid helium cryostat (T < 5 K) equipped with vector superconducting coils for applying external magnetic fields (Bext).
  2. Sample Preparation and Integration:

    • CrBr3 flakes were exfoliated and encapsulated in hexagonal boron nitride (hBN) within a pure nitrogen glovebox (H2O/O2 concentration <0.1 p.p.m.).
    • The hBN/CrBr3/hBN stack was transferred into the gap of a pre-patterned coplanar waveguide (CPW) deposited on a SiO2/Si substrate, enabling efficient microwave delivery.
  3. Pulsed ODMR Measurement Scheme:

    • The stray magnetic field (Bs) is mapped by measuring the electronic spin resonance spectrum using a pulsed ODMR sequence (Fig. 1d).
    • Short laser pulses (600 ns) and π-pulse microwaves (~80 ns) are used. Microwave pulses are applied 600 ns after the laser is switched off to prevent disturbance from laser-induced excitations.
    • Three pairs of sinusoidal signals are generated to simultaneously excite the three hyperfine split transitions of the 14N nuclear spin, optimizing sensitivity.
  4. Magnetization Reconstruction:

    • The stray magnetic field (Bs) is measured along the NV axis (54.7° relative to vertical).
    • The magnetization (Mz) image is reconstructed from Bs using a reverse-propagation protocol, assuming out-of-plane magnetization (justified by Bext being much lower than the in-plane critical field).
  5. Domain Evolution and Coercivity Study:

    • Samples were thermally demagnetized (heated to 45 K, cooled under zero field) before measurement cycles.
    • Magnetization images were taken successively while increasing the external magnetic field (2 mT to 6 mT) to observe domain wall motion and pinning effects.
    • Hysteresis loops were extracted by cycling the external field and calculating the average magnetization ratio (M/Msat) based on pixel counts of positive and negative domains.
  • Spintronic Device Development: Provides critical quantitative data (Msat, coercivity mechanisms) necessary for engineering next-generation 2D vdW magnet-based spintronic devices, such as magnetic tunnel junctions and memory elements.
  • Quantum Sensing and Metrology: Advances the state-of-the-art in cryogenic NV center magnetometry, offering a high-sensitivity, low-thermal-load platform for probing complex magnetic textures in quantum materials.
  • Materials Characterization (2D Magnets): Essential tool for non-invasive, nanoscale characterization of novel 2D magnetic materials and vdW heterostructures, particularly for imaging topological spin textures (e.g., skyrmions) and studying spin dynamics.
  • Defect and Interface Engineering: Enables precise localization of defects and grain boundaries that govern magnetic reversal processes, allowing for targeted material synthesis and defect control to optimize magnetic performance.
  • Cryogenic Instrumentation: The demonstrated pulsed ODMR technique is valuable for any cryogenic experiment requiring high magnetic sensitivity while strictly minimizing thermal dissipation.