Thermal Behavior of an AlGaN/GaN-Based Schottky Barrier Diode on Diamond and Silicon Substrates
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2021-03-14 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Authors | ZinâSig Kim, HyungâSeok Lee, SungâBum Bae, HoâKyun Ahn, SangâHeung Lee |
| Institutions | Electronics and Telecommunications Research Institute |
| Citations | 1 |
Abstract
Section titled âAbstractâDevices based on AlGaN/GaN heterostructures, for example, Schottky barrier diodes (SBDs) and high electron mobility transistors (HEMTs), have been intensively investigated for applications to high-frequency and high-power areas. Presently, the substrates widely distributed are AlGaN/GaN on SiC for its high performance in radio frequency (RF) applications, for examples high cutoff frequency ( f T ) or high maximum oscillation frequency ( f max ), and AlGaN/GaN on Si for its high power performance, for examples high breakdown voltage or high voltage operation. Chemical vapor deposition (CVD) diamond substrates have a thermal conductivity of 12 W/cm¡K, and this is a remarkable point because HEMTs or SBDs on AlGaN/GaN on CVD diamonds are one of the promising alternatives for power and RF applications. In comparison, the thermal conductivity of AlGaN/GaN on a sapphire substrate is 0.33 W/cm¡K while that of AlGaN/GaN on a Si substrate is 1.3 W/cm¡K and that of AlGaN/GaN on a SiC substrate is 4.9 W/cm¡K. In this work, we fabricated SBDs with a 137 mm Schottky channel length on AlGaN/GaN on Si and also on a CVD diamond substrate. We also compared the thermal behaviors of these fabricated large scale SBDs on Si and a CVD diamond substrate.