Thermal Simulation of 3D High Power GaN HEMT with a Low Cost Technique to Reduce Junction Temperature Due to Self Heating
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-11-18 |
| Authors | Md. Tahmidul Alam, Md. Mahadi Hasan |
| Citations | 1 |
Abstract
Section titled āAbstractāGaN HEMTs are highly promising for high speed devices because of its high electron mobility in a 2D channel. However, due to the high temperature caused by the self-heating effect near the junction, its commercial application has been severely limited. In literature, lots of works have been done to remove the excess heat generated near the junction. Highly expensive materials, such as diamond, SiC and sapphire have so far been used to drain the heat out of the junction. In this paper, we propose a comparatively cheap material, AlN ceramics to replace the costly materials with a slight trade off in performance. The proposed device was simulated in COMSOL Multiphysics in a full 3D. The results were generated by solving the fundamental laws of heat transfer numerically by the finite element method.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2017 - Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate
- 2018 - Full 3D Thermal Simulation of GaN HEMT using Ultra-Fast Self-Adaptive Computations Driven by Experimentally Determined Thermal Maps