Grain size-induced enhancement of thermoelectric performance of Cu3Sb1−xInxSe4 materials
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2021-06-02 |
| Journal | Functional Materials Letters |
| Authors | Lin Bo, Wenying Wang, Yongpeng Wang, Lei Wang, Fu-Jin Li |
| Institutions | University of Jinan, Qilu University of Technology |
Abstract
Section titled “Abstract”The ternary Cu 3 SbSe 4 thermoelectric material with diamond-like structure exhibits good thermoelectric performance in the middle temperature region. In this study, the Cu 3 Sb[Formula: see text]In[Formula: see text]Se 4 ([Formula: see text]= 0-0.03) materials were fabricated by melting-annealing-ball milling-hot pressing process. The influences of In-doping and grain size on the microstructure and thermoelectric properties of Cu 3 Sb[Formula: see text]In[Formula: see text]Se 4 were evaluated. It is found that the electricity conduction at room temperature for Cu 3 Sb[Formula: see text]In[Formula: see text]Se 4 sample was significantly increased to 6.1 × 10 3 Sm[Formula: see text] due to the In-doping. Additionally, during the powder processing, a relatively low thermal conductivity for the refinement Cu 3 Sb[Formula: see text]In[Formula: see text]Se 4 -BM-72H sample was obtained. Benefiting from the enhanced electrical conductivity and the decreased thermal conductivity, the maximum zT value of 0.75 was achieved for Cu 3 Sb[Formula: see text]In[Formula: see text]Se 4 -BM-36H at 650 K.