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Optoelectronic properties of ultra-wide-bandgap semiconductor NaYO2 - A first-principles study

MetadataDetails
Publication Date2021-07-06
JournalChinese Journal of Chemical Physics
AuthorsNisar Muhammad, M. U. Muzaffar, Huimin Li, Zejun Ding
InstitutionsUniversity of Science and Technology of China, Hefei National Center for Physical Sciences at Nanoscale
Citations3

Ultra-wide-bandgap semiconductors have tremendous potential to advance electronic devices, as device performance improves nonlinearly with increasing gap. In this work we employ density-functional theory with the accurate screened-hybrid functional to evaluate the electronic and optical properties of NaYO2 in two different phases. The electronic structure calculation results show that both monoclinic and trigonal phases of NaYO2 exhibit direct bandgaps of 5.6 eV and 5.4 eV, respectively, offering a physically realistic material platform to derive the semiconductor industry beyond the well-established diamond and GaN semiconducting materials. Next, we investigate the optical properties and reveal that both phases of NaYO2 are transparent in the infrared and visible regions, thereby, these materials can be used as infrared window materials.