Transient characteristics of β-Ga2O3 nanomembrane Schottky barrier diodes on various substrates
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2022-07-07 |
| Journal | Journal of Physics D Applied Physics |
| Authors | Junyu Lai, Jung‐Hun Seo |
| Institutions | University at Buffalo, State University of New York |
| Citations | 3 |
Abstract
Section titled “Abstract”Abstract In this paper, transient delayed rise and fall times for beta gallium oxide ( β -Ga 2 O 3 ) nanomembrane (NM) Schottky barrier diodes (SBDs) formed on four different substrates (diamond, Si, sapphire, and polyimide) were measured using a sub-micron second resolution time-resolved electrical measurement system under different temperature conditions. The devices exhibited noticeably less-delayed turn on/turn off transient time when β -Ga 2 O 3 NM SBDs were built on a high thermal conductive (high- k ) substrate. Furthermore, a relationship between the β -Ga 2 O 3 NM thicknesses under different temperature conditions and their transient characteristics were systematically investigated and verified it using a multiphysics simulator. Overall, our results revealed the impact of various substrates with different thermal properties and different β -Ga 2 O 3 NM thicknesses on the performance of β -Ga 2 O 3 NM-based devices. Thus, the high- k substrate integration strategy will help design future β -Ga 2 O 3 -based devices by maximizing heat dissipation from the β -Ga 2 O 3 layer.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
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