Fabrication of GaN/SiC/diamond structure for efficient thermal management of power device
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-10-05 |
| Authors | Ryo Kagawa, Keisuke Kawamura, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani |
| Institutions | Osaka City University, Tohoku University |
| Citations | 3 |
Abstract
Section titled āAbstractāThe self-heating of GaN-HEMTs is a serious issue in terms of the device performance and reliability. Therefore, diamond is the most promising candidate as a heat spreader material for HEMTs application because of its extremely high thermal conductivity. Therefore, we fabricate GaN-HEMTs on diamond substrate by using surface activated bonding method.