Schottky Barrier Height Modulation of Zr/p-Diamond Schottky Contact by Inserting Ultrathin Atomic Layer-Deposited Al2O3
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2021-10-14 |
| Journal | IEEE Transactions on Electron Devices |
| Authors | Juan Wang, Guoqing Shao, Genqiang Chen, Xiuliang Yan, Qi Li |
| Institutions | Xi’an Jiaotong University |
| Citations | 14 |
Abstract
Section titled “Abstract”We fabricated Zr/p-diamond Schottky barrier diodes (SBDs) with and without a ultrathin atomic layer-deposited Al <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sub> O <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</sub> interlayer. The effects of the Al <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sub> O <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</sub> interlayer on the electrical properties of devices were investigated using the current-voltage ( <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${I}-{V}$ </tex-math></inline-formula> ) and capacitance-voltage ( <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${C}-{V}$ </tex-math></inline-formula> ) characteristics at room temperature. Compared with Zr/p-diamond SBDs without the interlayer, SBDs with a 2-nm-thick Al <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sub> O <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</sub> interlayer exhibited higher Schottky barrier height and breakdown voltage. The insertion of the Al <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sub> O <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</sub> layer effectively reduced the interface state and it is considered that the barrier enhancement is attributed to the significant reduction of interface state density. This work provides a simple method to passivate the diamond surface and modulate the barrier heights of diamond SBDs.