Determination of band alignment between GaO x and boron doped diamond for a selective-area-doped termination structure
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-12-24 |
| Journal | Chinese Physics B |
| Authors | Qiliang Wang, Shi-Yang Fu, Si-Han He, Haibo Zhang, Shaoheng Cheng |
| Citations | 3 |
Abstract
Section titled āAbstractāAn n-GaO x thin film is deposited on a single-crystal boron-doped diamond by RF magnetron sputtering to form the pn heterojunction. The n-GaO x thin film presents a small surface roughness and a large optical band gap of 4.85 eV. In addition, the band alignment is measured using x-ray photoelectron spectroscopy to evaluate the heterojunction properties. The GaO x /diamond heterojunction shows a type-II staggered band configuration, where the valence and conduction band offsets are 1.28 eV and 1.93 eV, respectively. These results confirm the feasibility of the use of n-GaO x as a termination structure for diamond power devices.