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Diamond Metal-Semiconductor Field-Effect-Transistor-based Solar Blind Detector

MetadataDetails
Publication Date2021-12-06
AuthorsLei Ge, Yan Peng, Xiwei Wang, Dufu Wang, Mingsheng Xu
InstitutionsState Key Laboratory of Crystal Materials, Shandong University
Citations1

In this paper, a microwave plasma chemical vapor deposition (MPCVD) method is used to homoepitaxially epitaxial diamond film on a high-pressure high temperature(HPHT) diamond substrate, and a metal-semiconductor field effect transistor (MESFET) solar-blind detector is prepared to measure the photoelectric response performance of the detector. The results show that the detector made of diamond has a good photoelectric response to deep ultraviolet light.

  1. 2004 - CVD diamond detector for ultraviolet radiation
  2. 2015 - New concept ultraviolet photodetectors