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6CCVD Research

Simulation investigation of effects of substrate and thermal boundary resistance on performances of AlGaN/GaN HEMTs

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2024-05-14
JournalPhysica Scripta
AuthorsKang Wang, Wenbo Hu, Shengli Wu, Hongxing Wang, Muhammad Amin Padhiar
InstitutionsGuangzhou University, Xiā€™an Jiaotong University
Citations3

Abstract

Section titled ā€œAbstractā€

Abstract The temperature distributions and thermal resistances of the GaN HEMTs fabricated on different substrates (sapphire, Si, SiC and diamond) with Mo/Au interlayers were calculated and analyzed by numerical simulation. The results show that the GaN HEMT on the diamond substrate exhibits the lowest channel temperature and thermal resistance, and the thermal resistance rises with the increase of the thermal boundary resistance (TBR) for all the GaN HEMTs with the different substrate materials. Meanwhile, the high TBR (2 Ɨ 10 āˆ’7 m 2 Ā·K/W) severely hinders the heat exchange between the GaN layer and the substrate, which makes it difficult for the heat flux to pass through the barrier. Even diamond with high thermal conductivity can hardly reduce the channel temperature of the device. Therefore, TBR must be reduced so that the heat flux can be dissipated through a high thermal conductivity substrate. In addition, the Mo/Au interlayer generates a lower thermal boundary resistance, which has little effect on the channel temperature, thermal resistance and interfacial temperature discontinuity of GaN HEMTs.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2008 - GaN based RF power devices and amplifiers [Crossref]
  2. 2020 - Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs [Crossref]
  3. 2006 - AlGaN/GaN high electron mobility transistors with InGaN back-barriers [Crossref]
  4. 2010 - Suppression of current collapse for millimeter-wave GaN-HEMTs [Crossref]
  5. 2010 - Enhancement-mode GaN MIS-HEMTs with n-GaN/i-AlN/n-GaN triple cap layer and high-k gate dielectrics [Crossref]
  6. 2020 - Interfacial thermal conductance across room-temperature bonded GaN-diamond interfaces for GaN-on-diamond devices [Crossref]
  7. 2015 - Thermal resistance extraction of AlGaN/GaN depletion-mode HEMTs on diamond [Crossref]
  8. 2021 - GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs) [Crossref]
  9. 2004 - AlGaN/GaN HEMTs on Si substrate with 7 W/mm output power density at 10 GHz [Crossref]
  10. 2001 - Undoped AlGaN/GaN HEMTs for microwave power amplification [Crossref]

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