Phonon-Dominated Mobilities for Carriers in a Diamond Field Effect Transistor With a cBN Overlayer
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-12-06 |
| Journal | IEEE Electron Device Letters |
| Authors | Ramji Singh, Michael A. Stroscio, Mitra Dutta |
| Institutions | University of Illinois Chicago |
| Citations | 7 |
Abstract
Section titled āAbstractāIn this letter we investigate phonon-dominated mobilities for carriers in a diamond field effect transistor with a cubic Boron Nitride (cBN) overlayer. We investigate the intra-subband scattering due to interaction of electrons with acoustic phonons, treated properly as quantized surface acoustic Rayleigh waves, and include, for the first time, the interaction with remote polar phonons originating in the cBN overlayer. We conclude that the surface acoustic phonon scattering is the dominant mechanism limiting the mobility of electrons for temperatures below 375 K.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2019 - Diamond/c-BN HEMTs for power applications: A theoretical feasibility analysis
- 2021 - 1D Poisson Program