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6CCVD Research

Transport mechanism in O-terminated diamond/ZrO2 based MOSCAPs

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2021-12-04
JournalDiamond and Related Materials
AuthorsB. Soto, J. Cañas, M.P. Villar, D. AraĂșjo, Julien Pernot
InstitutionsInstitut NĂ©el, Universidad de CĂĄdiz
Citations9

Abstract

Section titled “Abstract”

Metal Oxide Semiconductor capacitors were fabricated using p-type O-terminated (001) diamond and zirconium
\ndioxide deposited by atomic layer deposition at low temperature (100 ◩C). X-ray diffraction and transmission
\nelectron microscopy evidence monoclinic structure and polycrystalline nature of the oxide layer. I-V, C-V and
\nC-F experiments have been performed in a large frequency range, i.e. from 1 Hz to 1 MHz, in order to analyse
\nthe electrical properties of the metal/dielectric/diamond stack. The presence of charges in the oxide and
\ninterface states induces a flat-band voltage shift in the C-V curve and a strong Fermi level pinning effect. A
\nleakage current mechanism considering the correlation of the microstructural characterization and the electrical
\nresponse is proposed.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
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  2. 2018 - Progress toward diamond power field-effect transistors
  3. 2021 - Two-inch high-quality (001) diamond heteroepitaxial growth on sapphire (110) misoriented substrate by step-flow mode [Crossref]
  4. 2018 - Comprehensive electrical analysis of metal/al2o3/o-terminated diamond capacitance [Crossref]
  5. 2018 - High quality al2o3/(100) oxygen-terminated diamond interface for mosfets fabrication [Crossref]
  6. 2018 - Gate oxide electrical stability of p-type diamond mos capacitors [Crossref]
  7. 2020 - Energy distribution of al2o3/diamond interface states characterized by high temperature capacitance-voltage method [Crossref]
  8. 2020 - Oxidized si terminated diamond and its mosfet operation with sio2 gate insulator [Crossref]
  9. 2016 - Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics [Crossref]
  10. 2017 - Deep-depletion mode boron-doped monocrystalline diamond metal oxide semiconductor field effect transistor [Crossref]

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