Thermal transport in beta-gallium oxide thin-films using non-gray Boltzmann transport equation
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-12-08 |
| Journal | Journal of Physics Condensed Matter |
| Authors | Nitish Kumar, Matthew C. Barry, Satish Kumar |
| Institutions | Georgia Institute of Technology |
| Citations | 4 |
Abstract
Section titled āAbstractāAbstract Phonon transport in Ī² -Ga 2 O 3 thin films and metal-oxide field effect transistors (MESFETs) are investigated using non-gray Boltzmann transport equations (BTEs) to decipher the effect of ballistic-diffusive phonon transport. The effects of domain size, and energy dissipation to various phonon modes and subsequent phonon-phonon energy exchange on the thermal transport and temperature distribution is investigated using non-gray BTE. Our analysis deciphered that domain size plays a major role in thermal transport in Ī² -Ga 2 O 3 but energy dissipation to various phonon modes and subsequent phonon-phonon energy exchange does not affect the temperature field significantly. Phonon transport in Ī² -Ga 2 O 3 MESFETs on diamond substrate is investigated using coupled non-gray BTE and Fourier model. It is established that the ballistic effects need to be considered for devices with Ī² -Ga 2 O 3 layer thickness less than 1 Ī¼ m. A non-gray phonon BTE model should be used near hotspot in the thin Ī² -Ga 2 O 3 layer as the Fourier model may not give accurate temperature distribution. The results from this work will help in understanding the mechanism of phonon transport in the Ī² -Ga 2 O 3 thin films and energy efficient design of its FETs.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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