Non‐Volatile Photo‐Switch Using a Diamond pn Junction (Adv. Electron. Mater. 1/2022)
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2022-01-01 |
| Journal | Advanced Electronic Materials |
| Authors | Cédric Masante, Martin Kah, Clément Hébert, Nicolas Rouger, Julien Pernot |
| Citations | 1 |
Abstract
Section titled “Abstract”Diamond Junction Field Effect Transistor Ultrawide bandgap semiconductors offer a new playground for researchers thanks to their huge energy scale. In article 2100542, Julien Pernot and co-workers create a diamond junction field effect transistor from a non-volatile photo-switch by taking advantage of the deep ionisation energy of the nitrogen donor in the n-type region. The state of the transistor can only be switched under illumination. In the dark, the transistor stores the state before switching off.