Access Region Stack Engineering for Mitigation of Degradation in AlGaN/GaN HEMTs With Field Plate

At a Glance

Metadata	Details
Publication Date	2022-02-10
Journal	IEEE Transactions on Device and Materials Reliability
Authors	Sushanta Bordoloi, Ashok K Ray, Gaurav Trivedi
Institutions	North Eastern Regional Institute of Science and Technology, Maulana Azad National Institute of Technology
Citations	14

Abstract

Electric field in a device varies as it switches between ON and OFF states. These states have different intensities of electric field and carrier density. The regions having high electric field affects reliability of a GaN-HEMT. In a AlGaN/GaN HEMT, degradation primarily initiates as a result of electric field crowding near its edges. The present work aims at suppressing high electric field in the SEMI-ON state at the field plate edge by incorporating a SiO 2 pocket at its edge. Numerical analysis is performed using a calibrated setup to investigate viability and performance of the proposed device. It is found that the electric field and electron temperature in the SEMI-ON state reduce significantly by incorporating a SiO 2 pocket around the field plate edge in the drain access region. For the device having SiO 2 pocket with diamond and passivation layer thickness kept at 30 nm each, the electric field, carrier temperature, and self heating reduces by 43%, 20%, and 13%, respectively at the field plate edge along with 47% reduction in the thermal resistance.

Tech Support

Original Source

DOI: https://doi.org/10.1109/tdmr.2022.3150714

References

**** - Preliminary reliability data from accelerated RF life tests on European GaN HEMTs