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6CCVD Research

Impact of nitrogen doping on homoepitaxial diamond (111) growth

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2022-03-28
JournalDiamond and Related Materials
AuthorsYuta Nakano, Xufang Zhang, K. Kobayashi, Tsubasa Matsumoto, Takao Inokuma
InstitutionsKanazawa University
Citations15

Abstract

Section titled ā€œAbstractā€

The impacts of nitrogen (N) doping on the lateral growth mode during two-dimensional (2D) nucleation, on the growth rate, and the incorporation of nitrogen (concentration [N]) of (111)-oriented diamond films were investigated by modulating the [N2]/[CH4] gas admixture ratio. The 2D nucleation density first increased with increasing [N2]/[CH4] ratio between 0.02 and 20%. Further increase of the [N2]/[CH4] ratio to up 200% caused a decrease of the nucleation density. The growth rates showed the similar N-doping dependence as the nucleation density variation. This is attributed to an initial increase of CN radicals in the regime 0.02 to 20%, followed by a reduction of CHx radicals in the regime 20 to 200%. The nitrogen incorporation concentration increases with increasing the [N2]/[CH4] ratio. The highest nitrogen concentration with 2 Ɨ 1020 atoms/cm3 is detected with [N2]/[CH4] = 200% and a relatively low nucleation density is achieved. These results are beneficial for the optimized formation of nitrogen-vacancy centers used in a quantum metrology and for device application such as inversion-channel diamond MOSFETs.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
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