Conductive AFM in SEM for 7 nm and beyond - AM - Advanced Metrology
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2022-05-02 |
| Authors | Greg M. Johnson, Thomas Rodgers, Heiko Stegmann, F. Hitzel |
| Institutions | Carl Zeiss (Germany) |
Abstract
Section titled āAbstractāMeasuring surface conduction points is a well-established analytical technique in SRAM failure analysis. A novel workflow and system have been developed that makes use of an Atomic Force Microscope (AFM) inside a Scanning Electron Microscope (SEM) and is capable of using standard laser deflection based probe tips. New results are provided on an 8T SRAM cell in 7 nm technology which demonstrate the ability to measure nFET, pFET, and gate contacts simultaneously with one scan, and with a topography measurement. A second analysis was performed to demonstrate the ability of the electron beam, combined with use of the AFM diamond tip as a scalpel, to expose subsurface layers and greatly improve current data. Furthermore, the system being in vacuum provides additional benefits in eliminating confounding effects.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 0 - Polishing a Sample Surface by AFM
- 2020 - Polishing a Sample Surface by AFM [Video]
- 0 - APEX SHARP