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Efficient heat dissipation from β-Ga2O3 film directly bonded on diamond substrate

MetadataDetails
Publication Date2022-05-11
Journal2022 International Conference on Electronics Packaging (ICEP)
AuthorsTakashi Matsumae, Yuichi Kurashima, Hideki Takagi, Hitoshi Umezawa, Hideyuki Watanabe
InstitutionsNational Institute of Advanced Industrial Science and Technology
Citations1

A β-Ga <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;2&lt;/inf> O <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;3&lt;/inf> film was directly bonded with a diamond heat spreader for efficient heat dissipation. Ga <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;2&lt;/inf> O <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;3&lt;/inf> is expected as a future material for power electronics, but it has a heat dissipation problem due to its low thermal conductivity. We demonstrated that thermal resistance could be improved by direct bonding with a diamond heat spreader.