Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga2O3 or Diamond Part II
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2022-05-20 |
| Journal | ECS Transactions |
| Authors | W. S. Lau |
| Institutions | Nanyang Technological University |
| Citations | 1 |
Abstract
Section titled āAbstractāSzeās theory has been the dominating theory regarding the Schottky emission effect (image force barrier lowering). The author noticed that the older and almost forgotten Krƶmerās theory can frequently give a much better fit to experimental data especially for higher reverse bias voltage. In order to explain Krƶmerās theory, it is necessary to apply the concept of velocity overshoot and quasi-ballistic transport to the depletion region in Schottky diodes. In this paper, the author will propose a unified theory for reverse leakage current in Schottky diodes.