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6CCVD Research

Simulation of silicon quantum dots with diamond-channel by simplified ME model

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2022-05-05
JournalResults in Physics
AuthorsXiaohui Zhu, Jie Gu, Huaxiang Yin, Zhenhua Wu
InstitutionsUniversity of Chinese Academy of Sciences, Institute of Microelectronics
Citations4

Abstract

Section titled ā€œAbstractā€

Developing novel silicon quantum dots (Si-QDs) on conventional CMOS process is one of the most important technologies in Si quantum computing to realize multi-bit integration with a large scale. In this paper, an analysis model based on master equation and realized by Python code is established to predict and optimize the performance of fabricated diamond channel Si-QDs for potential circuit applications. The model can fast describe the I-V characteristics of devices both in qualitative and semi quantitative method. The inherent tunneling process of Si-QDs can be well simulated by introducing additional parameters and the contribution of neighboring states can be analyzed by setting global parameters. In addition, the calculation speed and accuracy can be readily balanced by modifying the setting parameters. The simulation results of the model are in good agreement with the experimental results at low temperature, which lays a foundation for the performance prediction, structure and process optimization of the Si-QDs for a large scale circuit applications.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 1998 - Quantum computation with quantum dots [Crossref]
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  3. 2002 - A quasi-analytical SET model for few electron circuit simulation [Crossref]
  4. 2000 - Analytical Single-Electron Transistor (SET) Model for Design and Analysis of Realistic SET Circuits [Crossref]
  5. 2008 - SECS: A New Single-Electron-Circuit Simulator [Crossref]
  6. 2020 - Investigating the effect of quantized confining energy on the quantum coulomb blockade phenomena in single-electron transistor
  7. 2021 - Analytical approximations of single-electron device current through non-interacting quantum dot
  8. 2013 - Design and simulation of hybrid CMOS-SET circuits [Crossref]

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