High-field magnetotransport studies of surface-conducting diamonds
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2022-06-17 |
| Journal | Physical review. B./Physical review. B |
| Authors | Kaijian Xing, Daniel L. Creedon, Golrokh Akhgar, Steve Yianni, Jeffrey C. McCallum |
| Institutions | Monash University, ARC Centre of Excellence in Future Low-Energy Electronics Technologies |
Abstract
Section titled âAbstractâThe observation of a strong and tunable spin-orbit interaction (SOI) in surface-conducting diamond opens up a new avenue for building diamond-based spintronics. Herein we provide a comprehensive method to analyze the magnetotransport behavior of surface-conducting hydrogen-terminated diamond (H-diamond) Hall bar devices and $\mathrm{Al}/{\mathrm{Al}}{2}{\mathrm{O}}{3}/{\mathrm{V}}{2}{\mathrm{O}}{5}/\mathrm{H}$-diamond metal-oxide semiconductor field-effect transistors, respectively. By adopting a significantly improved theoretical magnetotransport model, the reduced magnetoconductance can be accurately explained both within and outside the quantum diffusive regime. The model is valid for all doping strategies of surface-conducting diamond tested. From this analysis, we find that the orbital magnetoresistance, a classical effect distinct from the SOI, dominates the magnetotransport in surface-conducting diamond at high magnetic fields. Furthermore, local hole mobilities as high as $1000\text{â}3000\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{2}/\mathrm{V}\phantom{\rule{0.16em}{0ex}}\phantom{\rule{0.16em}{0ex}}\mathrm{s}$ have been observed in this work, indicating the possibility of diamond-based electronics with ultrahigh hole mobilities at cryogenic temperatures.