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6CCVD Research

The separation mechanism of 4H-SiC dicing by continuous laser

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2022-08-10
Journal2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
AuthorsShaowei Li, Pei Chen, Fei Qin
InstitutionsBeijing University of Technology, Institute of Electronics
Citations1

Abstract

Section titled ā€œAbstractā€

The Silicon carbide (SiC) is the second hardest material for single crystalline materials, which is only softer than the diamond, and recognized as a super hard wide-bandgap semiconductor material. The cutting process of SiC is mainly done by the abrasives in diamond, which leads to low cutting efficiency, high loss of abrasives, and server cutting damage. Thermal Laser Separation (TLS) uses the thermal effect of laser irradiation to cause the uneven expansion of materials, and cause the dynamic tensile and compressive stress fields to control the crack expansion, and realize the material separation. TLS consists two steps, firstly pulsed laser or mechanical blade are adopted to form a starting point for the crack; secondly continuous wave laser is moving along the prefabricated trace to separation the wafer by guiding the crack propagation. The separation process is a controlled crack propagation process in brittle materials from the view of fracture mechanics. But there is still not enough understanding of the fracture mechanism and parameter optimization problem of SiC dicing with TLS.In this paper, to understand the separation process, we have established a finite element model with a prefabricated crack in ABAQUS. In the simulation operation, different powers are set from 8W to 15W. We obtained the temperature distribution law of SiC surface under different laser heat source parameters. The stress intensity factor of SiC prefabricated cracks under the action of laser heat sources was sorted out. The results demonstrate that the SiC fracture mode is type I fracture. By studying the law of the stress field distribution on the SiC surface and along the depth direction, We further understand the separation mechanism of 4H-SiC dicing by continuous laser.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2012 - Ablation Free Dicing of 4H-SiC Wafers with Feed Rates up to 200mm/s by Using Thermal Laser Separation

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