Detection of Defects in Diamond by Etch‐Pit Formation
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2019-06-22 |
| Journal | physica status solidi (a) |
| Authors | Takehiro Shimaoka, Kimiyoshi Ichikawa, Satoshi Koizumi, Kenji Watanabe, Tokuyuki Teraji |
| Institutions | National Institute for Materials Science |
| Citations | 11 |
Abstract
Section titled “Abstract”Correlation between the reverse current density J R of diamond vertical Schottky barrier diodes (SBD) and the shape of the etch pits is investigated. Etch pits form throughout the whole epitaxial layer area with a density of 6.8 × 10 4 -3.0 × 10 5 cm −2 . Most etch pits are isolated‐type, with flat‐bottom or point‐bottom shape. A typical pit size is 3-5 μm in width and 1-3 μm in depth. Some etch pits aggregate linearly with a size of >10 μm. The SBDs show large J R when these etch pit clusters appear. The etch pit cluster density is <10 3 cm −2 .