Numerical Investigation of Laterally Downscaled Hydrogen-Terminated Diamond FETs
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2022-12-01 |
| Journal | IEEE Transactions on Electron Devices |
| Authors | Junfei Chen, Yong Wu, Jinfeng Zhang, Dong Wang, Zeyang Ren |
| Institutions | Wuhu Institute of Technology, Beijing Microelectronics Technology Institute |
Abstract
Section titled “Abstract”Hydrogen-terminated diamond (H-diamond) field-effect transistors (FETs) have been the mainstream structure of diamond microwave devices. In this article, the direct current performance and cutoff frequency ( <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${f}{T}$ </tex-math></inline-formula> ) of H-diamond FETs with the gate length ( <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${L}{G}$ </tex-math></inline-formula> ) downscaling from <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$2 ~\mu \text{m}$ </tex-math></inline-formula> to 50 nm are investigated by 2-D device simulation. For our central-gated device with a 6-nm-thick Al2O3 gate dielectric, the transition point of <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${L}{G}$ </tex-math></inline-formula> from the long-channel behavior to the short-channel one is found to be about 200 nm. Though notable short-channel effects appear for <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${L}{G} \le {200}$ </tex-math></inline-formula> nm such as the negative shift of the threshold voltage and the increase of the drain-induced barrier lowering, the knee voltage at a given gate voltage stays almost constant for all the considered gate length range, which is unfavorable for a small-size device with lower operating voltage. It is found the effective velocity in the channel of short-channel H-diamond FETs at the drain voltage of 7 V is less than half of the saturation velocity. The <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${f}{T}$ </tex-math></inline-formula> versus <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${V}{\text {GS}}$ </tex-math></inline-formula> relation is quite different in the short channel case and long channel case, and it is analyzed in comparison with the <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${g}{m}$ </tex-math></inline-formula> versus <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${V}{\text {GS}}$ </tex-math></inline-formula> relation.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2021 - High frequency hydrogen-terminated diamond MESFET with an fmax of 103 GHz