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Photoconductive switch package configurations having a profiled resistive element

MetadataDetails
Publication Date2023-01-23
JournalOSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)
AuthorsScott D. Nelson, George Caporaso, Steven A. Hawkins, Hoang T. Nguyen, S. Sampayan

Methods, systems, and devices are disclosed for photoconductive switch package configurations. In some aspects, a photoconductive switch package includes of a wide bandgap photoconductive material (e.g., GaN, ZnO, diamond, AlN, SiC, BN, etc.), a source for energetic photons (e.g., a laser), a mechanism to couple the laser into the switch, and a mechanism for high voltage to enter and leave the switch package. In some implementations, the disclosed photoconductive switch packages can be configured as a three terminal device, e.g., similar to transistors, with one of the terminals being laser input or the voltage input to the laser system.