Silicon nitride hybrid-integrated diode laser at 637 nm
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-01-26 |
| Authors | Lisa V. Winkler, Kirsten Gerritsma, Albert van Rees, Philip P. J. Schrinner, Marcel Hoekman |
| Institutions | LioniX (Netherlands), University of Twente |
| Citations | 2 |
Abstract
Section titled āAbstractāWe present a hybrid-integrated extended cavity diode laser tunable around 637 mn, with a total tuning range of 8 nm, allowing to address the zero-phonon line of nitrogen vacancy centers. The laser provides wide mode-hop free tuning over 43.6 GHz and a narrow intrinsic linewidth below 10 kHz. The maximum output power is 2.5 mW in a single-mode fiber, corresponding to an on-chip power of 4.0 mW. The laser is assembled in a standard laser housing and fiber-pigtailed.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2022 - 2022 Roadmap on integrated quantum photonics
- 2021 - Quantum photonic processor based on programmable integrated silicon nitride circuits [Crossref]
- 2022 - Fully on-chip photonic turnkey quantum source for entangled qubit/qudit state generation
- 2022 - Widely tunable and narrow-linewidth chip-scale lasers from near-ultraviolet to near-infrared wavelengths