High performance trench diamond junction barrier Schottky diode with a sidewall-enhanced structure
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-03-09 |
| Journal | Chinese Physics B |
| Authors | Ying Zhu, Wang Lin, DongāShuai Li, Liuan Li, Xianyi Lv |
| Institutions | Jilin University, State Key Laboratory of Superhard Materials |
| Citations | 4 |
Abstract
Section titled āAbstractāThe trench diamond junction barrier Schottky (JBS) diode with a sidewall enhanced structure is designed by Silvaco simulation. Comparing with the conventional trench JBS diode, Schottky contact areas are introduced on the sidewall of the trench beside the top cathode. The sidewall Schottky contact weakens the junction field-effect transistor effect between the trenches to realize a low on-resistance and a high Baligaās figure of merit (FOM) value. In addition, the existence of the n-type diamond helps to suppress the electric field crowding effect and enhance the reverse breakdown voltage. With the optimal parameters of device structure, a high Baligaās FOM value of 2.28 GW/cm 2 is designed. Therefore, the proposed sidewall-enhanced trench JBS diode is a promising component for the applications in diamond power electronics.