Investigation of Ga2O3/diamond heterostructure solar-blind avalanche photodiode via TCAD simulation
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-03-15 |
| Journal | Chinese Physics B |
| Authors | Dun-Zhou ę¦ę“² Xu č®ø, Peng é¹ Jin é, Peng-Fei é¹é£ Xu å¾, Meng-Yang ę¢¦é³ Feng åÆ, Ju å·Ø Wu å“ |
| Institutions | Institute of Semiconductors, Chinese Academy of Sciences |
| Citations | 2 |
Abstract
Section titled āAbstractāA Ga 2 O 3 /diamond separate absorption and multiplication avalanche photodiode (SAM-APD) with mesa structure has been proposed and simulated. The simulation is based on an optimized Ga 2 O 3 /diamond heterostructure TCAD physical model, which is revised by repeated comparison with the experimental data from the literature. Since both Ga 2 O 3 and diamond are ultra-wide bandgap semiconductor materials, the Ga 2 O 3 /diamond SAM-APD shows good solar-blind detection ability, and the corresponding cutoff wavelength is about 263 nm. The doping distribution and the electric field distribution of the SAM-APD are discussed, and the simulation results show that the gain of the designed device can reach 5 Ć 10 4 and the peak responsivity can reach a value as high as 78 A/W.