Ultra-wide bandgap Ga2O3 technologies - benefits of heterogenous integration
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2023-03-16 |
| Authors | Abhishek Mishra, Arpit Nandi, Indraneel Sanyal, Zeina Abdallah, James W. Pomeroy |
| Institutions | University of Bristol |
| Citations | 3 |
Abstract
Section titled âAbstractâWe discuss the potential of heterogenous integration of Ga<sub>2</sub>O<sub>3</sub> with diamond for enabling energy-efficient kV-class power devices. The integration alleviates Ga<sub>2</sub>O<sub>3 </sub>material drawbacks such as its low thermal conductivity and inefficient hole conductivity. The benefits of heterogeneous integration are demonstrated through electrical and thermal simulations of a Ga<sub>2</sub>O<sub>3</sub>-Al<sub>2</sub>O<sub>3</sub>-diamond superjunction based Schottky barrier diode. The simulation studies show that the novel device has potential to break the RON-breakdown voltage limit of Ga<sub>2</sub>O<sub>3</sub>, while showing relatively low rise in temperature compared to conventional devices. First steps for the actual materials integration are taken with the epitaxial growth of Ga<sub>2</sub>O<sub>3</sub> on single crystal diamond substrates.