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6CCVD Research

Optimizing activation process for strong direct bonding between diamond and Si substrates

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2023-04-19
AuthorsSho Okita, Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Hitoshi Umezawa
InstitutionsNational Institute of Standards and Technology, Tokyo University of Science

Abstract

Section titled ā€œAbstractā€

We optimized process parameters to form strong bonding between diamond and Si substrates. Our previous study revealed that a diamond (100) substrate cleaned with a mixture of ammonia and hydrogen peroxide solutions can be bonded with a plasma-activated semiconductor substrate. In this study, when an oxygen plasma activation time was optimized, the shear strength of the bonded diamond and Si substrates satisfied a military standard for electronics. We believe that the semiconductor device strongly bonded on the diamond heat spreader can contribute to future high-power and high-frequency devices.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2021 - A Novel Strategy for GaN-on-Diamond Device with a High Thermal Boundary Conductance

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