Low temperature growth of nanocrystalline diamond - Insight thermal property
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-06-01 |
| Journal | Diamond and Related Materials |
| Authors | JosuƩ MillƔn-Barba, Andrew Taylor, Hicham Bakkali, Rodrigo AlcƔntara, Fernando Lloret |
| Institutions | Czech Academy of Sciences, Institute of Physics, Czech Academy of Sciences |
| Citations | 10 |
Abstract
Section titled āAbstractāOne of the limitations of materials for high-power devices and structural coatings applications is heat dissipation. Diamond is a suitable material for heat distribution \ndue to its high thermal conductivity. Nevertheless, it is usually grown at high temperature (800-1200 ā¦C), which limits its use as a coating for substrates vulnerable to \ndegradation at high temperatures. In this work, it is studied the effect of the distance between the plasma source and substrate on the growth of nanocrystalline \ndiamond layers on silicon substrates at low temperature (<450 ā¦C) by microwave linear antenna plasma enhanced chemical vapour deposition (MW-LA-PECVD) in \npulse mode. The nanocrystalline diamond films have been analysed by scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy. Finally, the superficial thermal conductivity of the diamond layers was determined by scanning thermal microscopy-AFM (SThM-AFM).
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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