Temporary and spatially resolved luminescence studies of p-GaN segments fabricated by vacancy-guided redistribution of Mg using sequential ion implantation of Mg and N
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2023-06-08 |
| Authors | Kohei Shima, Ryo Tanaka, Shinya Takashima, K. Ueno, Masaharu Edo |
| Institutions | Fuji Electric (Japan), Tohoku University |
| Citations | 1 |
Abstract
Section titled “Abstract”For realizing high-performance GaN power-switching devices, establishing an ion-implantation (I/I) technique to control conductivity type and conductivity in designated segments of GaN is an urgent issue. However, fabricating p-type GaN by Mg doping, especially p-GaN:Mg formation by I/I, has long been a tough job. The difficulty in Mg I/I arises from the fact that high concentration (>10 <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>19</sup> cm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-3</sup> ) divacancies comprising a Ga vacancy (V <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>Ga</inf> ) and a nitrogen vacancy (V <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>N</inf> ), namely V <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>Ga</inf> V <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>N</inf> , or trivacancies [V <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>Ga</inf> (V <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>N</inf> ) <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</inf> ] are introduced by Mg I/I and they agglomerate into (V <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>Ga</inf> V <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>N</inf> ) <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</inf> clusters by a post-implantation annealing (PIA) [1]. Because such vacancy complexes have been assigned as deleterious nonradiative recombination centers (NRCs) [2], gross amount of vacancies should be minimized and therefore suppressing gross I/I-induced damage is indispensable.