Tunable hybrid silicon single-electron transistor–nanoscale field-effect transistor operating at room temperature
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2023-06-05 |
| Journal | Applied Physics Letters |
| Authors | Faris Abualnaja, Wenkun He, K. Chu, A. D. Andreev, Mervyn Jones |
| Institutions | Imperial College London |
| Citations | 8 |
Abstract
Section titled “Abstract”A hybrid silicon single-electron transistor (SET)-field-effect transistor (FET), tunable by gate voltages between single-electron and classical FET operation, at room temperature (RT) is demonstrated. The device uses a side-gated, ∼6 nm wide, heavily doped n+ silicon fin. A gate-controlled transition occurs from a depletion mode FET, including characteristic output saturation, to a quantum dot SET with “Coulomb diamond” characteristics above and near the threshold voltage, respectively. Below the threshold voltage, p-FET behavior implies ambipolar operation. Statistics for 180 research devices show a high yield of ∼37% for RT SET-FET operation and mean single-electron addition energy ∼0.3 eV. This yield also demonstrates the probability of single-electron effects in highly scaled doped nanoFETs and the possibility of electrically tunable, RT quantum and classical mode, nanoelectronic circuits.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2009 - Single-Electron Devices and Circuits in Silicon