150 GHz High-Power Photodiode by Flip-Chip Bonding
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-08-15 |
| Journal | Journal of Lightwave Technology |
| Authors | Chao Wei, Xiaojun Xie, Ziyun Wang, Yake Chen, Zhongming Zeng |
| Institutions | Southwest Jiaotong University, Ministry of Science and Technology of the Peopleās Republic of China |
| Citations | 22 |
Abstract
Section titled āAbstractāWe report high-power modified uni-traveling carrier photodiodes with 150-GHz bandwidth. To improve the RF output power, the photodiode chips are flip-chip bonded on diamond submounts with high thermal conductivity to enhance heat dissipation. Measured 3-dB bandwidths of 4-Ī¼m, 6-Ī¼m, 8-Ī¼m, and 10-Ī¼m diameter photodiodes reach 150 GHz, 129 GHz, 117 GHz, and 105 GHz, respectively. RF output power with 12.7 dBm at 90 GHz, 11.3 dBm at 100 GHz, 8.5 dBm at 110 GHz, ā3 dBm at 150 GHz, and ā5.7 dBm at 165 GHz are achieved.