Heat dissipation technology of GaN power Amplifier based on diamond carrier
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-08-08 |
| Authors | Naiyi Ji, Hongda Zhou, Lixiang Zhang, Yongzhi Zhao, Zhiqiang Li |
| Institutions | Tianjin University |
| Citations | 1 |
Abstract
Section titled āAbstractāThe junction temperature and thermal resistance of the chip in four assembly schemes (chip is bonded to the diamond carrier by nanosilver and AuSn solder, chip is bonded to the molybdenum copper carrier by nanosilver and AuSn solder) were study by finite element simulation and experimental methods. The influence of the carrier thickness and the carrier area on the junction temperature of the chip was explored. The results show that the thermal resistance of diamond carrier with nano-silver adhesive is significantly smaller than other packaging forms. The heat dissipation ability of diamond carrier is significantly correlated with the thickness and area of the carrier. Increasing the area and thickness of the diamond carrier can enhance the heat dissipation effect. Thinning the molyb-denum-copper carrier is beneficial to heat dissipation, the area of molybdenum-copper carrier has little effect on heat dissipation.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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- 2023 - Research progress of advanced thermal management technology based on diamond [J]
- 2018 - New development of thermal management technology for Microsystems [J]
- 2014 - Recent progress in GaN-on-diamond device technology[J]