(Invited) New Layout Styles to Boost the Electrical, Energy, and Frequency Response Performances of Analog MOSFETs, Considering a Wide Range of High Temperatures
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-08-28 |
| Journal | ECS Meeting Abstracts |
| Authors | Salvador Pinillos Gimenez, Egon Henrique Salerno Galembeck |
| Institutions | Centro UniversitƔrio Internacional |
Abstract
Section titled āAbstractāThe 1st generation of innovative gate layout styles for MOSFETs have proven to be able to enhance the electrical performance and tolerance to ionizing radiation of analog MOSFETs. This paper presents the 2nd one. It preserves the new effects of the 1st generation and is able to further reduce the Leff of MOSFETs in relation to those achieved by the 1st generation, considering a wide range of high temperatures. We observe that the Half-Diamond layout style is able to boost the saturation drain current and the unity voltage gain frequency by up to 52.4% and 75%, respectively. Therefore, this technique remains an alternative to improve the electrical performance of analog MOSFETs, mainly for space, nuclear and medical CMOS ICs applications. Figure 1