Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junction
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2019-11-01 |
| Authors | Dong Liu, Sang Jung Cho, Aaron Hardy, Jisoo Kim, Cristian J. Herrera-Rodriguez |
| Institutions | Michigan State University, University at Buffalo, State University of New York |
| Citations | 2 |
Abstract
Section titled āAbstractāWe demonstrated GaAs/diamond (GaAs-C sp3 ) np diodes via lattice-mismatched semiconductor grafting: forming heterostructures with an ultrathin oxide (UO) layer at the interface. High-performance rectifying characteristics were measured from the GaAs/C sp3 diodes with sharp reverse breakdown voltage (Vb) of -44.5 V. Capacitance-voltage (CV) measurements were carried out and the measurement results were used to construct the band diagram of the pn junction. Furthermore, an AlGaAs/GaAs/C sp3 pnp structure was fabricated and both junctions were characterized for their I-V characteristics. The results show the prospect of realization of pnp AlGaAs/GaAs/C sp3 HBTs in the future.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2014 - CH surface diamond field effect transistors for high temperature (400 C) and high voltage (500 V) operation [Crossref]