Hydrophilic Bonding of GaN and Diamond Substrates
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-09-29 |
| Journal | ECS Transactions |
| Authors | Takashi Matsumae, Sho Okita, Shoya Fukumoto, Masanori Hayase, Yuichi Kurashima |
| Institutions | Tokyo University of Science, National Institute of Advanced Industrial Science and Technology |
Abstract
Section titled āAbstractāWe have developed a hydrophilic bonding technique for GaN and diamond substrates. Before the bonding step, the GaN substrate was dipped into HCl acid, and the diamond substrate was dipped into NH 4 OH/H 2 O 2 solution to generate hydrophilic surfaces. The treated GaN and diamond substrates were contacted with each other under atmospheric conditions. They are annealed at 300 Ā°C in 2 h for bonding formation. We expect that this bonding technique would contribute to the fabrication of the GaN-on-diamond structure.