Diamond RF Diodes Towards High Power Applications
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-10-29 |
| Authors | Jose Andres Orozco, J.M. Brown, Anna Zaniewski, Manpuneet Benipal, R. J. Nemanich |
| Institutions | Diamond Materials (United States), Arizona State University |
Abstract
Section titled āAbstractāFavorable material properties such as extreme thermal conductivity, high input power attenuation, low on resistance and high reliability make diamond among the most promising materials for high power RF applications such as limiter/receiver protector systems. RF diodes are the core component in receiver protector systems. To meet the needs of this application, we demonstrate successful diamond-based RF diode fabrication, starting with plasma enhanced chemical vapor deposition growth of p-i-n layers on <100> diamond substrates, microfabrication, and RF characterization. Diode characterization is conducted from dc to 25 GHz with results closely matching RF diode structures fabricated on <111> diamond substrates. Compared to previous <111> devices, we show off-capacitance and small signal resistance values as low as 16.1ā¢10 <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>-9</sup> F/cm <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</sup> and 0.65ā¢10 <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>-3</sup> Ohmā¢cm <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</sup> as well as additional pathways for further reducing these values and enabling receiver protector circuits with higher power handling requirements.