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6CCVD Research

Simulation of gallium phosphide cutting mechanism in ductile regime using molecular dynamics

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2023-10-03
Authorsmichel Tavares, Daniel Alexandre RolĆ³n, Julian Christian Bernhard Kober, Stefan KĆ¼hne, Rolf Bertrand Schroeter
InstitutionsTechnische UniversitƤt Berlin, Universidade Federal de Santa Catarina

Abstract

Section titled ā€œAbstractā€

Gallium Phosphide (GaP) is a semiconductor with advantageous optical properties for near- and middle infrared optical systems. However, optical applications of GaP are limited by its current low machinability. To cut brittle semiconductors such as GaP and generate optical quality surfaces, it is necessary to induce a High-Pressure Phase Transformation (HPPT) so that a phase is formed that behaves ductile when machined. Along the cutting process this can be achieved by applying a negative rake angle. Otherwise, cracks will appear on the machined surface, worsening its optical capabilities. A HPPT of GaP happens at an atomic scale when a zincblende structure changes into a Ī²-tin one. The Ī²-tin structure behaves ductile and is metastable. Hence, the metastable Ī²-tin phase cannot be observed during the cutting process. Therefore, atomistic simulation, such as Classic Molecular Dynamics Simulation (CMDS), is required to study the machinability under HPPT. In this work, CMDS were used to analyze GaP cutting mechanisms. A diamond tool was modelled with a cutting edge radius r<sub>Ī²</sub> = 10 nm, rake angle Ī³ = -20 Āŗ, and clearance angle Ī± = 10 Āŗ. The cut was performed with a depth of cut a<sub>p</sub> = 12 nm along the [100]-direction in a zincblende GaP workpiece. Stacking faults were found on the shear zone, {111}-planes, by two different post processes approaches. HPPT was found in the deformation zone only. A stagnation zone was found in front of the cutting edge proceeding a crack nucleation.

Tech Support

Section titled ā€œTech Supportā€

Original Source

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References

Section titled ā€œReferencesā€
  1. 2016 - Contactless Fault Isolation for FinFET Technologies with Visible Light and GaP SIL [Crossref]
  2. 1990 - A molecular dynamics model of the orthogonal cutting process
  3. 2002 - Phase transformations in silicon under contact loaing

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