Study of Degradation Mechanisms in Hydrogen-Terminated Diamond MOSFETs Under Off-State and Semi-on-State Conditions
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2023-10-27 |
| Authors | Zhihao Chen, Bo Yan, Ruimin Xu, Yuehang Xu |
| Institutions | University of Electronic Science and Technology of China |
Abstract
Section titled “Abstract”The study of degradation mechanisms is important to improve the reliability of hydrogen-terminated (C-H) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs). In this article, the trapping effects of C-H diamond MOSFET under off-state and semi-on-state conditions are studied by pulsed characterization. The results show that the on-resistance <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$(R_{\text{ON}})$</tex> increase with the increased intensity of the drain quiescent bias (V <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>DSQ</inf> ) under off-state conditions; the further increase in RON under semi-on-state conditions due to the hot-carrier effects. Furthermore, under off-state conditions, the increase in threshold voltage (V <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>TH</inf> ) is mainly due to the reverse gate quiescent bias (V <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>GSQ</inf> ) and the increased intensity in <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$V$</tex> <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>DSQ</inf> , which promotes the detrapping effects under the gate region. In addition, the decrease in <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$V_{\text{TH}}$</tex> under semi-on-state conditions is caused by the weakness of detrapping effects and the enhancement of hot-carrier effects.