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6CCVD Research

Deposition of diamond films by microwave plasma CVD on 4H-SiC substrates

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2023-11-02
JournalMaterials Research Express
AuthorsShasha Wei, Renqi Xie, Yuanyou Li, Jiahao Meng, Rongchuan Lin
InstitutionsJimei University
Citations3

Abstract

Section titled ā€œAbstractā€

Abstract Diamond films were deposited on 4H-SiC substrates by microwave plasma chemical vapor deposition (MPCVD). The substrate pretreatment method of electrostatic adsorption of seed crystals by nanodiamond suspensions was used, and the nucleation density of diamond on the substrate surface reached 10 10 /cm 2 compared with ultrasonic seed crystals of diamond micro-powder suspensions, and continuous dense diamond films were formed in a shorter growth time. Scanning electron microscopy and Raman spectroscopy were used to characterize the changes of diamond grain morphology and quality with methane concentration, deposition time and substrate temperature during the growth process. The experimental results show that the methane concentration, deposition time and substrate temperature are the key factors affecting the grain shape and quality of diamond. And the best quality of diamond film is obtained at 850 Ā°C substrate temperature.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2022 - High-voltage SiC power devices for improved energy efficiency
  2. 2020 - Deposition of diamond films on single crystalline silicon carbide substrates [Crossref]
  3. 2003 - Microwave plasma chemical vapor deposition: a promising technique for diamond films growth
  4. 2014 - Erosive wear performance of boron-doped diamond films on different substrates [Crossref]
  5. 2015 - Heteroepitaxial growth of diamond films on 3C-SiC/Si substrates with utilization of antenna-edge microwave plasma CVD for nucleation
  6. 2016 - Preparation and research on microwave plasma chemical vapor deposition diamond films on SiC substrate
  7. 2022 - Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition [Crossref]
  8. 2019 - Threshold displacement energies and displacement cascades in 4H-SiC: molecular dynamic simulations
  9. 2020 - Unprecedented differences in the diamond nucleation density between carbon- and silicon-faces of 4H-silicon carbides
  10. 2014 - Temperature dependence of nucleation density of chemical vapor deposition diamond [Crossref]

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