Deterministic creation of strained color centers in nanostructures via high-stress thin films
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-12-11 |
| Journal | Applied Physics Letters |
| Authors | Daniel Assumpção, Chang Jin, Madison Sutula, Sophie W. Ding, Phuong Pham |
| Institutions | Harvard University |
| Citations | 11 |
Abstract
Section titled āAbstractāColor centers have emerged as a leading qubit candidate for realizing hybrid spin-photon quantum information technology. One major limitation of the platform, however, is that the characteristics of individual color centers are often strain dependent. As an illustrative case, the silicon-vacancy center in diamond typically requires millikelvin temperatures in order to achieve long coherence properties, but strained silicon-vacancy centers have been shown to operate at temperatures beyond 1 K without phonon-mediated decoherence. In this work, we combine high-stress silicon-nitride thin films with diamond nanostructures to reproducibly create statically strained silicon-vacancy color centers (mean ground state splitting of 608 GHz) with strain magnitudes of ā¼4Ć10ā4. Based on modeling, this strain should be sufficient to allow for operation of a majority silicon-vacancy centers within the measured sample at elevated temperatures (1.5 K) without any degradation of their spin properties. This method offers a scalable approach to fabricate high-temperature operation quantum memories. Beyond silicon-vacancy centers, this method is sufficiently general that it can be easily extended to other platforms as well.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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