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Topological Mott transistor with high current density based on hydrogen-terminated diamond

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2023-12-25
JournalApplied Physics Letters
AuthorsHyunā€Tak Kim, M. M. Qazilbash
InstitutionsWilliams (United States), William & Mary
Citations2

Abstract

Section titled ā€œAbstractā€

The mechanism for the high drain-source current density, IDSā‰ˆ 1.3 A/mm, measured in a field effect transistor based on hydrogen-terminated diamond, is explained by the Mott insulator-metal transition (IMT). A local metal phase satisfying the Mott criterion for an IMT occurs in a p-type semiconductor formed by coupling between hydrogen and carbon on the surface of diamond. The local Mott metal phase on the surface of a p-type semiconductor leads to high carrier and current densities, and the transistor utilizing this effect is construed as a Mott power transistor. A channel material consisting of local Mott metal regions on the surface of a p-type semiconductor, such as hydrogen-terminated diamond, may be considered an inhomogeneous, topological Mott insulator.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2004 - Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices [Crossref]
  2. 2011 - Oxide electronics utilizing ultrafast metal-insulator transitions [Crossref]
  3. 2015 - Electrochemical gating-induced reversible and drastic resistance switching in VO2 nanowires [Crossref]
  4. 1966 - Physical limitations on frequency and power parameters of transistors
  5. 2017 - Thermal stability and failure mechanism of Schottky gate AlGaN/GaN HEMTs [Crossref]
  6. 2018 - Power Electronics Device Applications of Diamond Semiconductors
  7. 2021 - Surface transfer doping of diamond: A review [Crossref]
  8. 2012 - Diamond field-effect transistors with 1.3 A/mm drain current density by Al2O3 passivation layer [Crossref]
  9. 2012 - Thermally stable operation of H-terminated diamond FETs by NO2 adsorption and Al2O3 passivation [Crossref]
  10. 2019 - High output current boron-doped diamond metal-semiconductor field-effect transistors [Crossref]

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