Creation of color centers in diamond by recoil implantation through dielectric films
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-01-22 |
| Journal | Applied Physics Letters |
| Authors | Yuyang Han, Christian Pederson, Bethany E. Matthews, Nicholas Yama, Maxwell F. Parsons |
| Institutions | University of Washington, Pacific Northwest National Laboratory |
| Citations | 3 |
Abstract
Section titled āAbstractāThe need of near-surface color centers in diamond for quantum technologies motivates the controlled doping of specific extrinsic impurities into the crystal lattice. Recent experiments have shown that this can be achieved by momentum transfer from a surface precursor via ion implantation, an approach known as ārecoil implantation.ā Here, we extend this technique to incorporate dielectric precursors for creating nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers in diamond. Specifically, we demonstrate that gallium focused-ion-beam exposure to a thin layer of silicon nitride or silicon dioxide on the diamond surface results in the introduction of both extrinsic impurities and carbon vacancies. These defects subsequently give rise to near-surface NV and SiV centers with desirable properties after annealing.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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